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takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-033.A00G 4GB

takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 9905678-033.A00G 4GB

总分
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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.6
    测试中的平均数值
Kingston 9905678-033.A00G 4GB 需要考虑的原因
Kingston 9905678-033.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 46
    左右 -92% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-033.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 24
  • 读取速度，GB/s
    5,535.6 left arrow 15.6
  • 写入速度，GB/s
    1,852.4 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2407

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Kingston 9905678-033.A00G 4GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
内存RAM