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takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9965640-013.A01G 32GB

takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 9965640-013.A01G 32GB

总分
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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Kingston 9965640-013.A01G 32GB

Kingston 9965640-013.A01G 32GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 10.1
    测试中的平均数值
Kingston 9965640-013.A01G 32GB 需要考虑的原因
Kingston 9965640-013.A01G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 46
    左右 -35% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9965640-013.A01G 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 34
  • 读取速度，GB/s
    5,535.6 left arrow 10.1
  • 写入速度，GB/s
    1,852.4 left arrow 7.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2065

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Kingston 9965640-013.A01G 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9965640-013.A01G 32GB
Kingston 9965640-013.A01G 32GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-3200C15-16GTZSK 16GB
G Skill Intl F4-3200C15-16GTZSK 16GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M2B3000C15 16GB
Corsair CMK32GX4M2B3000C15 16GB
内存RAM
Corsair CMD8GX3M2A2800C12 4GB
Corsair CMD8GX3M2A2800C12 4GB
Kingston 9965600-011.A01G 16GB
Kingston 9965600-011.A01G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
V-GEN D4H8GL32A8TS 8GB
V-GEN D4H8GL32A8TS 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2400C15-8GNT 8GB
G Skill Intl F4-2400C15-8GNT 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston KHX3466C17D4/16GX 16GB
Kingston KHX3466C17D4/16GX 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM