takeMS International AG TMS2GB264D082-805G 2GB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 11.5

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的写入速度，GB/s

9.1 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

5,535.6 11.5
写入速度，GB/s

1,852.4 9.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB