takeMS International AG TMS2GB264D082-805G 2GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 10.6

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 46

左右 -5% 更低的延时
更快的写入速度，GB/s

8.8 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 44
读取速度，GB/s

5,535.6 10.6
写入速度，GB/s

1,852.4 8.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3600C16-16GTRG 16GB

G Skill Intl F4-3600C16-16GTRG 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Corsair CMV8GX4M1A2400C16 8GB

Corsair CMV8GX4M1A2400C16 8GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB