takeMS International AG TMS2GB264D082-805G 2GB vs Samsung M471A1G44BB0-CWE 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 60

左右 23% 更低的延时
更快的读取速度，GB/s

5 15.3

测试中的平均数值

Samsung M471A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB

报告一个错误

更快的写入速度，GB/s

11.0 1,852.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Samsung M471A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 60
读取速度，GB/s

5,535.6 15.3
写入速度，GB/s

1,852.4 11.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

858 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4SFS8266.M8FE 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Samsung M393B1G70QH0-YK0 8GB

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Corsair CMD64GX4M4B3000C15 16GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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Ramaxel Technology RMUA5110MB78HAF2400 8GB

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Crucial Technology CT4G4SFS8213.C8FDD2 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

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Crucial Technology CT16G4SFD824A.M16FR 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905624-018.A00G 8GB

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