takeMS International AG TMS2GB264D082-805G 2GB vs SK Hynix GKE160UD102408-2400 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时
更快的读取速度，GB/s

5 15.5

测试中的平均数值

SK Hynix GKE160UD102408-2400 16GB

需要考虑的原因
SK Hynix GKE160UD102408-2400 16GB

报告一个错误

更快的写入速度，GB/s

8.9 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

SK Hynix GKE160UD102408-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

5,535.6 15.5
写入速度，GB/s

1,852.4 8.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1986

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Chun Well Technology Holding Limited CL18-22-22 D4-3600

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V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Gloway International (HK) STK4U2400D17082C 8GB

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Apacer Technology 78.01GA0.9K5 1GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB