takeMS International AG TMS2GB264D082-805G 2GB vs Team Group Inc. DDR4 2666 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 13

测试中的平均数值

Team Group Inc. DDR4 2666 8GB

需要考虑的原因
Team Group Inc. DDR4 2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的写入速度，GB/s

10.4 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Team Group Inc. DDR4 2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

5,535.6 13.0
写入速度，GB/s

1,852.4 10.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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SK Hynix HMT451U6BFR8A-PB 4GB

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Crucial Technology CT25664BA160B.C8F 2GB

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Samsung M378B5673FH0-CH9 2GB

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Samsung M393A1G40EB1-CRC 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Team Group Inc. DDR4 2666 8GB

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Micron Technology 8ATF2G64HZ-3G2E1 16GB

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A-DATA Technology DQVE1908 512MB

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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston 9905734-102.A00G 32GB

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Kingston 9965640-035.C00G 32GB

Kingston 9965640-035.C00G 32GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB