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takeMS International AG TMS2GB264D082-805G 2GB
Team Group Inc. DDR4 3600 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Team Group Inc. DDR4 3600 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Team Group Inc. DDR4 3600 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
64
左右 28% 更低的延时
更快的读取速度,GB/s
5
17
测试中的平均数值
需要考虑的原因
Team Group Inc. DDR4 3600 8GB
报告一个错误
更快的写入速度,GB/s
8.8
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Team Group Inc. DDR4 3600 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
64
读取速度,GB/s
5,535.6
17.0
写入速度,GB/s
1,852.4
8.8
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
2103
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Team Group Inc. DDR4 3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2666C12-8GTXD 8GB
Panram International Corporation L421008G4C1528K34O8A 8
Kingston 9905403-437.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M471B5673FH0-CF8 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Kingston KVR533D2N4 512MB
Mushkin MB[A/B]4U240FFFF16G 16GB
Kingston 9905458-017.A01LF 4GB
Kingston 99U5643-001.A00G 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Samsung M471B5273CH0-CH9 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-2133C15-4GRR 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Team Group Inc. DDR4 3600 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3466C16-8GTZSW 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905702-002.A00G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS1GSH64V4B 8GB
报告一个错误
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