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Team Group Inc. DDR4 2800 8GB
A-DATA Technology AX5U5200C3816G-B 16GB

Team Group Inc. DDR4 2800 8GB vs A-DATA Technology AX5U5200C3816G-B 16GB

总分
star star star star star
Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB

总分
star star star star star
A-DATA Technology AX5U5200C3816G-B 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

差异 规格 评论

差异

Team Group Inc. DDR4 2800 8GB 需要考虑的原因
Team Group Inc. DDR4 2800 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
A-DATA Technology AX5U5200C3816G-B 16GB 需要考虑的原因
A-DATA Technology AX5U5200C3816G-B 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 11.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Team Group Inc. DDR4 2800 8GB
A-DATA Technology AX5U5200C3816G-B 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    14.6 left arrow 15.5
  • 写入速度，GB/s
    11.0 left arrow 13.4
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    2890 left arrow 3347

Team Group Inc. DDR4 2800 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AX5U5200C3816G-B 16GB RAM的比较

A-DATA Technology AD5U480016G-B 16GB
G Skill Intl F4-4266C19-32GTZR 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
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A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M474A1G43DB0-CPB 8GB
内存RAM