Team Group Inc. Team-Elite-1333 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Team Group Inc. Team-Elite-1333 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

总分

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

差异规格评论

差异

Team Group Inc. Team-Elite-1333 4GB

需要考虑的原因
Team Group Inc. Team-Elite-1333 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

15.6 12.9

测试中的平均数值
更快的写入速度，GB/s

11.8 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Team Group Inc. Team-Elite-1333 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

12.9 15.6
写入速度，GB/s

7.7 11.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2028 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB