Kingston 9905403-156.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Kingston 9905403-156.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 31% 更低的延时
更快的读取速度，GB/s

17.7 15.6

测试中的平均数值
更快的写入速度，GB/s

13.1 11.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 26
读取速度，GB/s

17.7 15.6
写入速度，GB/s

13.1 11.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2926 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-4000C16-16GTRSA 16GB

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Samsung M393A2K43BB1-CRCA1 16GB

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