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Team Group Inc. Team-Value-800 2GB
Lexar Co Limited LD4AS016G-H2666G 16GB

Team Group Inc. Team-Value-800 2GB vs Lexar Co Limited LD4AS016G-H2666G 16GB

总分
star star star star star
Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

总分
star star star star star
Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

差异 规格 评论

差异

Team Group Inc. Team-Value-800 2GB 需要考虑的原因
Team Group Inc. Team-Value-800 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13
    测试中的平均数值
Lexar Co Limited LD4AS016G-H2666G 16GB 需要考虑的原因
Lexar Co Limited LD4AS016G-H2666G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 54
    左右 -46% 更低的延时
  • 更快的写入速度，GB/s
    7.9 left arrow 1,952.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Team-Value-800 2GB
Lexar Co Limited LD4AS016G-H2666G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 37
  • 读取速度，GB/s
    4,586.7 left arrow 13.0
  • 写入速度，GB/s
    1,952.2 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    704 left arrow 2512

Team Group Inc. Team-Value-800 2GB RAM的比较

Corsair VS2GB800D2 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Lexar Co Limited LD4AS016G-H2666G 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
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Crucial Technology BLS8G4D240FSC.16FBD 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
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Samsung M393B5170FH0-CH9 4GB
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Samsung M471A1A43CB1-CRC 8GB
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Avant Technology F6451U64F9333G 4GB
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Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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Kingston KHX2666C15S4/8G 8GB
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Qimonda 64T128020EDL2.5C2 1GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
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Samsung M393A1G40DB0-CPB 8GB
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Corsair CMW32GX4M2E3200C16 16GB
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Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
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Samsung M378B5673EH1-CF8 2GB
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G Skill Intl F4-4133C19-8GTZC 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
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