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Team Group Inc. UD5-6400 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB

Team Group Inc. UD5-6400 16GB vs Micron Technology 4ATF51264HZ-2G3B2 4GB

总分
star star star star star
Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

差异 规格 评论

差异

Team Group Inc. UD5-6400 16GB 需要考虑的原因
Team Group Inc. UD5-6400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 31
    左右 32% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 11.2
    测试中的平均数值
Micron Technology 4ATF51264HZ-2G3B2 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 15
    测试中的平均数值

规格

完整的技术规格清单
Team Group Inc. UD5-6400 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 31
  • 读取速度，GB/s
    15.0 left arrow 15.4
  • 写入速度，GB/s
    13.9 left arrow 11.2
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3774 left arrow 2447

Team Group Inc. UD5-6400 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4400C16-8GTRS 8GB

Micron Technology 4ATF51264HZ-2G3B2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
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Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
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Kingston 9905701-017.A00G 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4X16GE2666Z16K4 16GB
Corsair CM4X16GE2666Z16K4 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM