Samsung M471B5273EB0-CK0 4GB vs Wilk Elektronik S.A. IR2400D464L17/16G 16GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 -74% 更低的延时
更快的读取速度，GB/s

16.8 12.3

测试中的平均数值
更快的写入速度，GB/s

9.6 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 23
读取速度，GB/s

12.3 16.8
写入速度，GB/s

8.9 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 2726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4S8GL30A8TS5 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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G Skill Intl F4-3200C16-4GTZ 4GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Kingston KHX318C10FR/8G 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMD16GX4M2C3333C16 8GB

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A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

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G Skill Intl F4-3200C16-8GSXFB 8GB

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Kingston 99U5458-008.A00LF 4GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB