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Team Group Inc. UD5-6400 16GB
Samsung M393A1G40DB1-CRC 8GB

Team Group Inc. UD5-6400 16GB vs Samsung M393A1G40DB1-CRC 8GB

总分
star star star star star
Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分
star star star star star
Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

差异 规格 评论

差异

Team Group Inc. UD5-6400 16GB 需要考虑的原因
Team Group Inc. UD5-6400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 48
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.1
    测试中的平均数值
Samsung M393A1G40DB1-CRC 8GB 需要考虑的原因
Samsung M393A1G40DB1-CRC 8GB
报告一个错误

规格

完整的技术规格清单
Team Group Inc. UD5-6400 16GB
Samsung M393A1G40DB1-CRC 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 48
  • 读取速度，GB/s
    15.0 left arrow 10.8
  • 写入速度，GB/s
    13.9 left arrow 8.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3774 left arrow 2431

Team Group Inc. UD5-6400 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4400C16-8GTRS 8GB

Samsung M393A1G40DB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-033.A00LF 4GB
Kingston 99U5471-033.A00LF 4GB
Kingston 9905712-035.A00G 16GB
Kingston 9905712-035.A00G 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Samsung M393A1G40DB1-CRC 8GB
Samsung M393A1G40DB1-CRC 8GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Kingston 9905625-098.A00G 16GB
Kingston 9905625-098.A00G 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
Kingston 99U5471-033.A00LF 4GB
Kingston 99U5471-033.A00LF 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
内存RAM
SK Hynix HMT41GU6DFR8A-PB 8GB
SK Hynix HMT41GU6DFR8A-PB 8GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905700-046.A00G 16GB
Kingston 9905700-046.A00G 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM