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Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB

Team Group Inc. Vulcan-1600 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分
star star star star star
Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异 规格 评论

差异

Team Group Inc. Vulcan-1600 4GB 需要考虑的原因
Team Group Inc. Vulcan-1600 4GB
报告一个错误
Micron Technology 4ATF51264HZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 39
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 35
  • 读取速度，GB/s
    14.3 left arrow 14.8
  • 写入速度，GB/s
    8.7 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2376 left arrow 2336

Team Group Inc. Vulcan-1600 4GB RAM的比较

PNY Electronics 4GBH1X04F1AA28-15 4GB
Kingston KYXC0V-MIB 16GB

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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