Team Group Inc. ZEUS-2133 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Team Group Inc. ZEUS-2133 8GB

需要考虑的原因
Team Group Inc. ZEUS-2133 8GB

报告一个错误

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 -3% 更低的延时
更快的写入速度，GB/s

11.2 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Team Group Inc. ZEUS-2133 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 34
读取速度，GB/s

15.6 15.6
写入速度，GB/s

9.6 11.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2625 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology CT4G4SFS8213.C8FHP 4GB

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Kingston 9905702-029.A00G 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Apacer Technology 78.CAGP7.AZC0B 8GB

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Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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G Skill Intl F4-2400C16-16GFXR 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB