Samsung M471B5273DH0-CH9 4GB vs Crucial Technology CT4G4SFS8213.C8FHP 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FHP 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FHP 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

14.6 9.3

测试中的平均数值
更快的写入速度，GB/s

10.0 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

9.3 14.6
写入速度，GB/s

5.9 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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Corsair CMK16GX4M1C3000C16 16GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 9905403-134.A00LF 2GB

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Samsung M471B5273DH0-CH9 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

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Kingston 9905625-097.A00G 16GB

Kingston 9905625-097.A00G 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB