TwinMOS 8DHE3MN8-HATP 2GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值
更快的写入速度，GB/s

870.4 11.0

测试中的平均数值

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 87

左右 -172% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 32
读取速度，GB/s

3,155.6 15.7
写入速度，GB/s

870.4 11.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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AMD AE34G1601U1 4GB

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 9965669-025.A00G 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB