TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CM4B16G1L3200K18K2 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值
更快的写入速度，GB/s

870.4 15.5

测试中的平均数值

Corsair CM4B16G1L3200K18K2 16GB

需要考虑的原因
Corsair CM4B16G1L3200K18K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 87

左右 -222% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CM4B16G1L3200K18K2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 27
读取速度，GB/s

3,155.6 17.7
写入速度，GB/s

870.4 15.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 3798

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 9905678-138.A00G 8GB

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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Corsair CMSX16GX4M2A3000C18 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-2666C19-8GSXK 8GB

G Skill Intl F4-2666C19-8GSXK 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMK8GX4M1D2666C16 8GB

Corsair CMK8GX4M1D2666C16 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB