TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMK32GX4M4B3600C16 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值
更快的写入速度，GB/s

870.4 12.6

测试中的平均数值

Corsair CMK32GX4M4B3600C16 8GB

需要考虑的原因
Corsair CMK32GX4M4B3600C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 87

左右 -263% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK32GX4M4B3600C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 24
读取速度，GB/s

3,155.6 16.1
写入速度，GB/s

870.4 12.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB