TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMN32GX4M2Z3600C18 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.7

测试中的平均数值
更快的写入速度，GB/s

870.4 15.5

测试中的平均数值

Corsair CMN32GX4M2Z3600C18 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

45 87

左右 -93% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMN32GX4M2Z3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 45
读取速度，GB/s

3,155.6 19.7
写入速度，GB/s

870.4 15.5
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 3240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMA41GU6MFR8N-TF 8GB

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Apacer Technology 78.C1GMM.BAC0B 8GB

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Samsung M378B5173BH0-CH9 4GB

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Kingston XW21KG-MIE-NX 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Essencore Limited KD4AGS88C-26N1900 16GB

Essencore Limited KD4AGS88C-26N1900 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB