TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMW32GX4M2C3200C16 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMW32GX4M2C3200C16 16GB

Corsair CMW32GX4M2C3200C16 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值
更快的写入速度，GB/s

870.4 14.8

测试中的平均数值

Corsair CMW32GX4M2C3200C16 16GB

需要考虑的原因
Corsair CMW32GX4M2C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 87

左右 -200% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMW32GX4M2C3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 29
读取速度，GB/s

3,155.6 17.8
写入速度，GB/s

870.4 14.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3645

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Kingston 9905403-011.A03LF 2GB

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Micron Technology 72ASS4G72LZ-2G3A2 32GB

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Kingston 9905403-090.A01LF 4GB

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Kingston KHX3200C16D4/8GX 8GB

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Samsung M471B5273DH0-CH9 4GB

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Samsung DDR3 8GB 1600MHz 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CB8GU2666.C8ET 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB