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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology CT16G4DFD824A.M16FD 16GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Crucial Technology CT16G4DFD824A.M16FD 16GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
17
测试中的平均数值
更快的写入速度,GB/s
870.4
11.3
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FD 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
87
左右 -248% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
25
读取速度,GB/s
3,155.6
17.0
写入速度,GB/s
870.4
11.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
417
2912
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology CT16G4DFD824A.M16FD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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