TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology CT16G4DFRA266.C16FP 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值
更快的写入速度，GB/s

870.4 10.4

测试中的平均数值

Crucial Technology CT16G4DFRA266.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 87

左右 -164% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 33
读取速度，GB/s

3,155.6 15.0
写入速度，GB/s

870.4 10.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Panram International Corporation D4N2666PS-16G 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

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Kingston 9905403-156.A00LF 2GB

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Crucial Technology CT16G4DFD8213.M16FB 16GB

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Kingston KHX2666C13/16GX 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Transcend Information JM3200HLB-16GK 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB