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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology CT4G4DFS824A.C8FBD2 4GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
14.3
测试中的平均数值
更快的写入速度,GB/s
870.4
8.8
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
33
87
左右 -164% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
33
读取速度,GB/s
3,155.6
14.3
写入速度,GB/s
870.4
8.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
417
2086
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9905625-096.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston HX426C16FB2/8-SP 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMD32GX4M4B2133C10 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C17-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston CBD32D4S2D8HD-16 16GB
Qimonda 72T128420EFA3SB2 1GB
Samsung M393A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3600C16-32GTZN 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KTD3KX-MIB 8GB
PNY Electronics PNY 2GB
Avant Technology W641GU48J7240ND 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK32GX4M2C3333C16 16GB
报告一个错误
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