TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3600C18-32GTZN 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值
更快的写入速度，GB/s

870.4 15.5

测试中的平均数值

G Skill Intl F4-3600C18-32GTZN 32GB

需要考虑的原因
G Skill Intl F4-3600C18-32GTZN 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 87

左右 -190% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3600C18-32GTZN 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 30
读取速度，GB/s

3,155.6 18.0
写入速度，GB/s

870.4 15.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 3694

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G3E2 8GB

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Kingston 9905702-007.A00G 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-2133C15-16GVR 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Corsair CMK16GX4M2Z2933C16 8GB