TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3866C18-8GTZR 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值
更快的写入速度，GB/s

870.4 14.5

测试中的平均数值

G Skill Intl F4-3866C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 87

左右 -222% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3866C18-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 27
读取速度，GB/s

3,155.6 18.0
写入速度，GB/s

870.4 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3531

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2666C15D4/4G 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3866C18-8GTZR 8GB

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Kingston 9905403-090.A01LF 4GB

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Corsair MK16GX4M2B3200C16 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology BLS8G4S240FSD.16FBD 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB

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G Skill Intl F4-3000C14-16GTZR 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

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Kingston HP669238-071-HYC 4GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB