TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4800C19-8GTESC 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值
更快的写入速度，GB/s

870.4 18.3

测试中的平均数值

G Skill Intl F4-4800C19-8GTESC 8GB

需要考虑的原因
G Skill Intl F4-4800C19-8GTESC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 87

左右 -248% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4800C19-8GTESC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 25
读取速度，GB/s

3,155.6 17.4
写入速度，GB/s

870.4 18.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CH9 16GB

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Corsair CMT32GX4M2Z3200C16 16GB

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Corsair CML8GX3M2A1866C9 4GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-4800C19-8GTESC 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3200C14-32GTZR 32GB

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Apacer Technology 78.01GA0.9K5 1GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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Kingston 99U5403-492.A00LF 8GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB