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TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
14.3
测试中的平均数值
更快的写入速度,GB/s
870.4
11.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
87
左右 -211% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
28
读取速度,GB/s
3,155.6
14.3
写入速度,GB/s
870.4
11.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
417
2481
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Kingston 99U5458-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173DB0-YK0 4GB
Kingston HP37D4U1S8ME-16XR 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KYXC0V-MIH 16GB
Kingston KF552C40-16 16GB
V-GEN D4S8GL30A8TS5 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
UMAX Technology 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston CBD32D4S2S1ME-8 8GB
AMD R538G1601U2S 8GB
Corsair CMD32GX4M2C3200C14M 16GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston HP32D4U8S8ME-8X 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology RM51264BA1339.16FR 4GB
Apacer Technology GD2.1527WH.002 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-8GTZSW 8GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-2133C15-8GRR 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3600C19-8GSXF 8GB
报告一个错误
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Bug description
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