TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 16ATF2G64AZ-2G1B1 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.1

测试中的平均数值
更快的写入速度，GB/s

870.4 9.1

测试中的平均数值

Kingston 16ATF2G64AZ-2G1B1 8GB

需要考虑的原因
Kingston 16ATF2G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

67 87

左右 -30% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 16ATF2G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 67
读取速度，GB/s

3,155.6 17.1
写入速度，GB/s

870.4 9.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2027

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology BLE8G4D26AFEA.16FBD 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Crucial Technology BLS4G4D26BFSB.8FD2 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-3733C17-4GVK 4GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB