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TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905622-024.A00G 4GB

TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 9905622-024.A00G 4GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Kingston 9905622-024.A00G 4GB

Kingston 9905622-024.A00G 4GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 11.1
    测试中的平均数值
Kingston 9905622-024.A00G 4GB 需要考虑的原因
Kingston 9905622-024.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 87
    左右 -248% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905622-024.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 25
  • 读取速度，GB/s
    3,155.6 left arrow 14.8
  • 写入速度，GB/s
    870.4 left arrow 11.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2305

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Kingston 9905622-024.A00G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
PUSKILL DDR3 1600 8G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C15-8GVS 8GB
G Skill Intl F4-2666C15-8GVS 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMSO16GX4M1A2133C15 16GB
Corsair CMSO16GX4M1A2133C15 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-2666C19-8GVR 8GB
G Skill Intl F4-2666C19-8GVR 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMD16GX4M2B3466C16 8GB
Corsair CMD16GX4M2B3466C16 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK64GX4M8A2400C14 8GB
Corsair CMK64GX4M8A2400C14 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM