TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 9965589-024.D01G 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 10.2

测试中的平均数值
更快的写入速度，GB/s

870.4 7.7

测试中的平均数值

Kingston 9965589-024.D01G 16GB

需要考虑的原因
Kingston 9965589-024.D01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 87

左右 -164% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9965589-024.D01G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 33
读取速度，GB/s

3,155.6 10.2
写入速度，GB/s

870.4 7.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2280

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9965589-024.D01G 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Mushkin 991586 2GB

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Crucial Technology CT16G4SFD824A.M16FR 16GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMK32GX4M4A2400C12 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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Kingston 9905622-057.A00G 4GB