TwinMOS 8DHE3MN8-HATP 2GB vs Kingston HP24D4U7S8MBP-4 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston HP24D4U7S8MBP-4 4GB

Kingston HP24D4U7S8MBP-4 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值
更快的写入速度，GB/s

870.4 12.0

测试中的平均数值

Kingston HP24D4U7S8MBP-4 4GB

需要考虑的原因
Kingston HP24D4U7S8MBP-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 87

左右 -85% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston HP24D4U7S8MBP-4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 47
读取速度，GB/s

3,155.6 15.8
写入速度，GB/s

870.4 12.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2800C15-4GVRB 4GB

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Samsung M471B1G73EB0-YK0 8GB

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Kingston KHX3000C16D4/32GX 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston HP24D4U7S8MBP-4 4GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-2400C15-8GVR 8GB

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Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Corsair CMK16GX4M1C3000C16 16GB

Corsair CMK16GX4M1C3000C16 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB