TwinMOS 8DHE3MN8-HATP 2GB vs Kingston XW21KG-MIE2 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值
更快的写入速度，GB/s

870.4 13.5

测试中的平均数值

Kingston XW21KG-MIE2 8GB

需要考虑的原因
Kingston XW21KG-MIE2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 87

左右 -164% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston XW21KG-MIE2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 33
读取速度，GB/s

3,155.6 16.9
写入速度，GB/s

870.4 13.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMV4GX3M1B1600C11 4GB

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Corsair CMK8GX4M2A2400C16 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

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A-DATA Technology AD73I1C1674EV 4GB

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMSX8GX4M2A2666C18 4GB

Corsair CMSX8GX4M2A2666C18 4GB