TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 8ATF1G64AZ-3G2J1 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值
更快的写入速度，GB/s

870.4 12.2

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 87

左右 -200% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 29
读取速度，GB/s

3,155.6 15.8
写入速度，GB/s

870.4 12.2
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M393B1K70QB0-CK0 8GB

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SK Hynix HMA84GL7AMR4N-UH 32GB

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Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

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G Skill Intl F4-3866C18-4GVK 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology BLS8G4D240FSE.16FBR2 8GB