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TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 12.4
    测试中的平均数值
Micron Technology 8ATF1G64AZ-3G2R1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 87
    左右 -181% 更低的延时

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 31
  • 读取速度，GB/s
    3,155.6 left arrow 16.9
  • 写入速度，GB/s
    870.4 left arrow 12.4
  • 内存带宽，mbps
    5300 left arrow no data
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow no data
  • 排名PassMark (越多越好)
    417 left arrow 3043

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM的比较

V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung 1600 CL10 Series 8GB
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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
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Kingston 9905665-020.A00G 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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G Skill Intl F4-3300C16-8GTZ 8GB
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SK Hynix HYMP512S64CP8-Y5 1GB
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G Skill Intl F4-3200C16-8GVK 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Kingston 9905711-015.A00G 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Golden Empire CL15-17-17 D4-3200 8GB
Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Patriot Memory (PDP Systems) PSD48G240081 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM