TwinMOS 8DHE3MN8-HATP 2GB vs Patriot Memory (PDP Systems) PSD416G26662 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值
更快的写入速度，GB/s

870.4 12.6

测试中的平均数值

Patriot Memory (PDP Systems) PSD416G26662 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G26662 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 87

左右 -172% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 32
读取速度，GB/s

3,155.6 16.3
写入速度，GB/s

870.4 12.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 3164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK32GX4M4K4000C19 8GB

Corsair CMK32GX4M4K4000C19 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Panram International Corporation W4N2666PS-16G 16GB

Panram International Corporation W4N2666PS-16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB