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TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA851S6DJR6N-XN 4GB

TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 11.6
    测试中的平均数值
SK Hynix HMA851S6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 87
    左右 -98% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA851S6DJR6N-XN 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 44
  • 读取速度，GB/s
    3,155.6 left arrow 14.9
  • 写入速度，GB/s
    870.4 left arrow 11.6
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2191

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

SK Hynix HMA851S6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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内存RAM
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G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
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Crucial Technology CT8G4SFRA266.C8FE 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
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Corsair MK16GX44B3000C15 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Samsung M378A2G43BB3-CWE 16GB
内存RAM