TwinMOS 8DPT5MK8-TATP 2GB vs A-DATA Technology AM1P26KC4U1-BACS 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 12.8

测试中的平均数值

A-DATA Technology AM1P26KC4U1-BACS 4GB

需要考虑的原因
A-DATA Technology AM1P26KC4U1-BACS 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 53

左右 -36% 更低的延时
更快的写入速度，GB/s

11.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 39
读取速度，GB/s

3,726.4 12.8
写入速度，GB/s

1,590.1 11.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 2089

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMK64GX4M4C3000C16 16GB

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Kingston KHX1866C9D3/8GX 8GB

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Samsung M378A2G43AB3-CWE 16GB

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Samsung M471A2G43AB2-CWE 16GB

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Samsung M471A1K43CB1-CTD 8GB

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Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

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Crucial Technology BLS4G4D240FSC.8FBD 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Samsung M393B1K70CH0-YH9 8GB

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Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB