TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CM4X4GF2133C15S2 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值

Corsair CM4X4GF2133C15S2 4GB

需要考虑的原因
Corsair CM4X4GF2133C15S2 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 53

左右 -77% 更低的延时
更快的写入速度，GB/s

12.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CM4X4GF2133C15S2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 30
读取速度，GB/s

3,726.4 17.3
写入速度，GB/s

1,590.1 12.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2190

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMR16GX4M2K4266C19 8GB

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Kingston 9905403-515.A00LF 8GB

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Kingston 9905711-017.A00G 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-4000C18-16GTRS 16GB

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Kingston 9905471-006.A01LF 4GB

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G Skill Intl F4-3600C19-8GTZRB 8GB

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Kingston K531R8-MIN 4GB

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Team Group Inc. TEAMGROUP-UD4-4133 8GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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G Skill Intl F4-3333C16-16GTZ 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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G Skill Intl F4-3600C19-16GVRB 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB