TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMK16GX4M4A2400C16 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Corsair CMK16GX4M4A2400C16 4GB

需要考虑的原因
Corsair CMK16GX4M4A2400C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 53

左右 -96% 更低的延时
更快的写入速度，GB/s

10.9 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK16GX4M4A2400C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 27
读取速度，GB/s

3,726.4 14.8
写入速度，GB/s

1,590.1 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2641

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston HP32D4S2S8ME-16 16GB

Kingston HP32D4S2S8ME-16 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Kingston 9905471-054.A00LF 8GB

Kingston 9905471-054.A00LF 8GB

Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB