Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology BLS4G4D240FSE.8FBD2 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 16.4

测试中的平均数值

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 96

左右 -317% 更低的延时
更快的写入速度，GB/s

12.3 1,336.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 23
读取速度，GB/s

2,725.2 16.4
写入速度，GB/s

1,336.0 12.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

438 2723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Apacer Technology 78.C1GS7.DFW0C 8GB

Apacer Technology 78.C1GS7.DFW0C 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB