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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 8% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
报告一个错误
更快的读取速度,GB/s
17.7
16
测试中的平均数值
更快的写入速度,GB/s
14.0
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
26
读取速度,GB/s
16.0
17.7
写入速度,GB/s
12.5
14.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3017
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB RAM的比较
Corsair CML16GX3M2A1600C10 8GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Samsung M471A1G44AB0-CWE 8GB
Kingston 9965690-002.A00G 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 9965433-034.A00LF 4GB
Kingston 9905712-008.A00G 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KHX2666C15D4/8G 8GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMK32GX4M4B3466C16 8GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Maxsun MSD44G24Q0 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK128GX4M4A2666C16 32GB
Samsung M391B1G73QH0-CMA 8GB
Samsung M393B2G70EB0-YK0 16GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
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Bug description
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