TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMK32GX4M4A2400C12 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Corsair CMK32GX4M4A2400C12 8GB

需要考虑的原因
Corsair CMK32GX4M4A2400C12 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 -104% 更低的延时
更快的写入速度，GB/s

10.9 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M4A2400C12 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 26
读取速度，GB/s

3,726.4 14.8
写入速度，GB/s

1,590.1 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2849

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Kingston KN2M64-ETB 8GB

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Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Corsair CMD8GX4M2B4000C19 4GB

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Kingston KF548C38-16 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMK32GX4M2A2133C13 16GB

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A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Samsung M471B5173QH0-YK0 4GB

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Golden Empire CL17-17-17 D4-2400 16GB