TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMK32GX4M4B3866C18 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.9

测试中的平均数值

Corsair CMK32GX4M4B3866C18 8GB

需要考虑的原因
Corsair CMK32GX4M4B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 53

左右 -165% 更低的延时
更快的写入速度，GB/s

15.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M4B3866C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 20
读取速度，GB/s

3,726.4 19.9
写入速度，GB/s

1,590.1 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3558

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43BB2-CRC 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology BLE4G4D26AFEA.8FADG 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Smart Modular SMS4WEC8C1K0446FCG 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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AMD R748G2400U2S 8GB

Kingston KVR16N11/8-SP 8GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Samsung M471B5173BH0-CK0 4GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 9965525-155.A00LF 8GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB