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TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
比较
TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BLS4G4D240FSA.8FBD 4GB
总分
TwinMOS 8DPT5MK8-TATP 2GB
总分
Crucial Technology BLS4G4D240FSA.8FBD 4GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
更快的读取速度,GB/s
3
16.6
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
53
左右 -130% 更低的延时
更快的写入速度,GB/s
12.4
1,590.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
53
23
读取速度,GB/s
3,726.4
16.6
写入速度,GB/s
1,590.1
12.4
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
522
2659
TwinMOS 8DPT5MK8-TATP 2GB RAM的比较
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5428-063.A00LF 8GB
Kingston 9965669-017.A00G 16GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3000C15-4GRR 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Transcend Information JM2666HLE-16G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Corsair CMY8GX3M2A2666C10 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965596-016.B01G 8GB
Elpida EBE10UE8AFSA-8G-F 1GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
A-DATA Technology DDR2 800G 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston KHX2800C14D4/8GX 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
报告一个错误
×
Bug description
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