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TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB

TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology CT4G4DFS8213.C8FAR11 4GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.7
    测试中的平均数值
Crucial Technology CT4G4DFS8213.C8FAR11 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 53
    左右 -51% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 35
  • 读取速度，GB/s
    3,726.4 left arrow 13.7
  • 写入速度，GB/s
    1,590.1 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2731

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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Samsung M391A1G43DB0-CPB 8GB
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