TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology CT4G4DFS824A.C8FE 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 72

左右 26% 更低的延时
更快的读取速度，GB/s

3 15.6

测试中的平均数值

Crucial Technology CT4G4DFS824A.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FE 4GB

报告一个错误

更快的写入速度，GB/s

8.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 72
读取速度，GB/s

3,726.4 15.6
写入速度，GB/s

1,590.1 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 1728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1G43DB0-CPB 8GB

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Kingston KF3200C18D4/8G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT4G4DFS824A.C8FE 4GB

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Kingston MSI24D4S7S7MH-16 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9905471-085.A00LF 8GB

Kingston 9905471-085.A00LF 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB