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TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
比较
TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology CT8G4SFS824A.C8FP 8GB
总分
TwinMOS 8DPT5MK8-TATP 2GB
总分
Crucial Technology CT8G4SFS824A.C8FP 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
更快的读取速度,GB/s
3
16
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FP 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
53
左右 -71% 更低的延时
更快的写入速度,GB/s
13.1
1,590.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
53
31
读取速度,GB/s
3,726.4
16.0
写入速度,GB/s
1,590.1
13.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
522
2999
TwinMOS 8DPT5MK8-TATP 2GB RAM的比较
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Crucial Technology CT8G4SFS824A.C8FP 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology DDR4 2666 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C16-16GTRG 16GB
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Corsair CM4X8GE2666C16K8 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905713-008.A00G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J641GU42J9266ND 8GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
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Bug description
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